发明名称 |
Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter |
摘要 |
A vertical TVS (VTVS) circuit includes a semiconductor substrate for supporting the VTVS device thereon having a heavily doped layer extending to the bottom of substrate. Deep trenches are provided for isolation between multi-channel VTVS. Trench gates are also provided for increasing the capacitance of VTVS with integrated EMI filter.
|
申请公布号 |
US2010314716(A1) |
申请公布日期 |
2010.12.16 |
申请号 |
US20100806659 |
申请日期 |
2010.08.18 |
申请人 |
MALLIKARARJUNASWAMY SHEKAR;BOBDE MADHUR |
发明人 |
MALLIKARARJUNASWAMY SHEKAR;BOBDE MADHUR |
分类号 |
H01L27/06;H01L21/04 |
主分类号 |
H01L27/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|