| 摘要 |
Embodiments of a pixel that includes a photosensitive region, a floating diffusion region, and a transistor transfer gate disposed between the photosensitive region and the floating diffusion region. The transfer gate includes first and second transfer gate elements, the first transfer gate element having a different doping than the second transfer gate element. By controlling the doping of the first and second transfer gate elements a transfer gate can be provided with a greater threshold voltage near the photosensitive region and a lesser threshold voltage near the floating diffusion region. Other embodiments, including process embodiments, are disclosed and claimed.
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