| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an apparatus for producing an SiC single crystal with which the arrival of particles to an SiC single crystal substrate is restrained and a high quality SiC single crystal is produced. <P>SOLUTION: Baffles are arranged in multiple stages in a heating vessel 9. By constituting such a structure, the length of the flow passage of a raw material gas 3 is elongated in comparison with the case that the baffles are not provided or one baffle is arranged in a single stage. Consequently, the raw material gas 3 is exposed to a high temperature for a prolonged time in the heated heating vessel 9. Thereby, particles are decomposed and prevented from arriving to the surface of a seed crystal 5 and the growth surface of a SiC single crystal 6. Accordingly, the high quality SiC single crystal 6 is produced. <P>COPYRIGHT: (C)2011,JPO&INPIT |
