| 摘要 |
PROBLEM TO BE SOLVED: To provide a cerium oxide abrasive capable of reducing generation of scratch while maintaining a suitable polishing speed and precisely polishing a surface of a semiconductor, and a polishing method for a substrate using the abrasive. SOLUTION: The cerium oxide abrasive contains a cerium oxide particle obtained by pulverizing the cerium oxide obtained by calcinating a mixture of cerium carbonate and glycolic acid; and water, and a median of a secondary particle diameter of the cerium oxide is 0.1-1μm. Further, a mixing ratio of the glycolic acid is 1-12 mol relative to 1 mol of the cerium carbonate. Further, a content of the cerium oxide having a secondary particle diameter of 3μm or more is 500 ppm or less in a solid. COPYRIGHT: (C)2011,JPO&INPIT |
