| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide the process of forming a plurality of elements in a chip, wherein each of the plurality of elements constitute a high frequency device. <P>SOLUTION: In the semiconductor device, a resistor element and a lower electrode of a capacitor element are formed from the same polycrystalline silicon film on the substrate 1. A gate electrode of a power MISFET, an upper electrode of the capacitor element, a gate electrode of an n-channel type MISFET and a gate electrode of a p-channel type MISFET are formed from a same polycrystalline silicon film that is different from the polycrystalline silicon film and a WSi film. A capacitor element MIMC is formed having an interconnect formed on the silicon oxide film 30 deposited on the substrate 1 as a lower electrode and an interconnect formed on the silicon oxide film 34 as an upper electrode in a region MIM. A spiral coil comprising an interconnect 39A is formed in a region IND, and a bonding pad comprising an interconnect 39B is formed in a PAD region using the same aluminum alloy deposited on a silicon oxide film 37 deposited on a silicon oxide film 34. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
