| 摘要 |
PROBLEM TO BE SOLVED: To cause a sputtering target composed of various metallic materials to satisfy requirement properties for a sputtered film which have been made more severe caused by an increase in the performance of various devices, and concretely to cause the sputtering target to achieve the uniformization of the film thickness distribution and the uniformization of the film composition of sputtered film, to achieve the improvement of the various properties of a film used as various functional materials and the uniformization thereof, and to achieve reduction in the number of the generation of dust. SOLUTION: There is disclosed a method for producing a sputtering target containing Al as a principal component in which the average value of an oxygen content on the whole is≤300 ppm, and the oxygen content in each part lies in the range within±22% of the average value of the whole. The method comprises: a step where a coarse metallic material containing Al as a principal component is bubbling-treated and dissolved by Ar gas and is thereafter subjected to vacuum melting to obtain a melted material; and a step where the melted material is subjected to plastic working, or comprises: a step where a coarse metallic material containing Al as a principal component is subjected to vacuum melting to obtain a melted material; and a step where the melted material is repeatedly subjected to hot working to a radius direction and an axial direction in such a manner that the total working ratio reaches≥200%. COPYRIGHT: (C)2011,JPO&INPIT
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