| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a lateral field-effect transistor, which has uniform characteristics, even if increasing an element area. SOLUTION: The semiconductor device includes: a first conductivity type semiconductor layer 11; a second conductivity type deep well 12; a first conductivity type well 13; a second conductivity type source layer 15 formed within the well; a second conductivity type drain layer 17; a second conductivity type contact layer 19 which is formed in an upper layer portion of the deep well and is connected to the rain layer; a gate electrode 21 provided in an area right above a region between the source and the drain; and a second conductivity type drift layer 18. While a reverse bias voltage is applied between the source layer and the drain layer, punch-through does not occur between the source layer and the drain layer and a first depletion layer between the drain layer and the well and a second depletion layer between the well and the deep well are connected with a junction breakdown voltage between the well and the drain layer or lower. COPYRIGHT: (C)2011,JPO&INPIT
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