METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device including a thin film transistor having excellent electric characteristics without an increase in the number of processes in the case where a gate electrode is provided via a gate insulating film at the upper and lower sides of a channel forming region of the thin film transistor in order to control a threshold voltage of the thin-film transistor.

SOLUTION: An increase in the number of processes required for manufacturing a second gate electrode is reduced by forming a gate electrode to be provided at the upper part of an oxide semiconductor layer simultaneously when patterning the oxide semiconductor takes place.

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