| 摘要 |
<p>Disclosed is a semiconductor device comprising an IGBT element region, a diode element region, and a boundary region provided between the IGBT element region and the diode element region, the IGBT element region, the diode element region and the boundary region being provided within an identical semiconductor substrate. A second conductivity type carrier accumulation region is provided within a first conductivity type first body region in the IGBT element region. In the boundary region, a second conductivity type third diffusion region is provided within the first conductivity type second diffusion region so as to extend by such a length that the second conductivity type third diffusion region comes into contact with the carrier accumulation region. The above constitution can suppress the movement of carriers through the boundary region into the diode element region during the actuation of IGBT to reduce an on-voltage. Further, in diode reverse recovery, the accumulation of carriers in a drift region in the boundary region can be suppressed to reduce a reverse recovery current.</p> |
