| 摘要 |
PURPOSE: A light emitting device and a manufacturing method thereof are provided to improve the epitaxial quality of the light emitting device by including a high critical reverse voltage value and high brightness. CONSTITUTION: A light emitting array structure includes a substrate(10) and a two light emitting units or more formed on the substrate. The light emitting array structure includes a rectification light emitting array structure and a DC light emitting array structure. The DC light emitting array structure includes a light emitting epitaxial structure. The light emitting epitaxial structure includes a contact layer(20), an n type semiconductor layer(40), a p type semiconductor layer(60), and an active layer(50). The light emitting epitaxial structure includes a process conversion layer(31) interposed between the contact layer and the n type semiconductor layer. |
