| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element capable of emitting light having a wavelength of 200-300 nm with high efficiency. <P>SOLUTION: In this semiconductor light emitting element, a protruded undoped AlN layer (1604) is formed on an AlN substrate (1602), a light emitting layer (1608) is formed on the undoped AlN layer, and an interface between the light emitting layer and layers in contact with it (1606, 1610) has a plurality of plane orientations. <P>COPYRIGHT: (C)2011,JPO&INPIT |
