| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable the control of the delay amount of an internal circuit of a semiconductor device after the semiconductor device is formed on a wafer. <P>SOLUTION: The internal power supply circuit 11 supplying a voltage VA to an internal circuit 12 of a semiconductor device 10 through internal power supply wiring 30A, includes: a reference potential generation circuit 16 configured to generate a plurality of reference potential sets VAREF having mutually different temperature dependency; an internal power generation circuit 15A for generating a power voltage VA using the reference potential VAREF, generated by the reference potential generation circuit 16, as criteria; and a control circuit 18 for selecting the reference potential VAREF to be generated in the reference potential generation circuit 16. <P>COPYRIGHT: (C)2011,JPO&INPIT |
