| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device equipped with a three-dimensional memory cell array with a large capacity which can be inexpensively produced. <P>SOLUTION: The three-dimensional memory cell array 1 is configured in such a manner that each one end of memory cells aligned in a Z direction is connected to intermediate selection lines which are respectively disposed in a plurality of X and Y directions to elongate to the Z direction, and another end of each memory cell at the same position in the Z direction are connected to third selection lines 12 disposed in the Z direction, and a two-dimensional array 2 is configured in such a manner that first selection transistors are disposed in each of the X and Y directions. Respective gates of the first selection transistors aligned in the X direction are connected to a first selection line 13, respective drains of the first selection transistors aligned in the Y direction are connected to a second selection line 14, respective sources of the first selection transistors are connected to the intermediate selection lines, the first selection line is connected to an X decoder 3, the second selection line is connected to a Y decoder 4, and the third selection line is connected to a Z decoder 5 through a second selection transistor 15, respectively. A plurality of third selection lines disposed in the X or Y direction are selected by the second selection transistors. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
