| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for forming a silicon nitride film for forming the silicon nitride film having high stress at low temperatures, and to provide a program. SOLUTION: First, dichlorosilane is supplied into a reaction tube 2, and a reactant obtained through reaction with the dichlorosilane is formed on a semiconductor wafer W. Next, a hydrogen radical is supplied into the reaction tube 2 to react it with the reactant to remove chlorine contained in the reactant. Then, the reaction tube 2 is set to 40-100 Pa, and an ammonia radical is supplied into the set reaction tube 2. Thereby, the ammonia radical reacts with the reactant to form a silicon nitride film on the semiconductor wafer W. This process is repeated two or more times to form a desired silicon nitride film. COPYRIGHT: (C)2011,JPO&INPIT
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