SEMICONDUCTOR DEVICE AND PROCESS FOR MANUFACTURE THEREOF

摘要

Disclosed is a semiconductor device (100) which comprises: a silicon carbide layer; a first electrode and a second electrode both formed on the silicon carbide layer; an insulating film formed on the silicon carbide layer and the first and second electrodes and respectively having, formed therein, a first contact hole and a second contact hole both extending to the first electrode and the second electrode, respectively; a first metal wiring line (11) and a second metal wiring line (12) both formed on the insulating film and electrically insulated from each other; a first barrier metal layer (16) formed between the first metal wiring line (11) and the first electrode so as to contact with the first metal wiring line (11) and connected to the first electrode in the first contact hole; and a second barrier metal layer (17) formed between the second metal wiring line (12) and the second electrode so as to contact with the second metal wiring line (12) and connected to the second electrode in the second contact hole. In the semiconductor device (100), the outline form of the first barrier metal layer (16) is arranged in the inside of the outline form of the first metal wiring line (11) and the outline form of the second barrier metal layer (17) is arranged in the inside of the outline form of the second metal wiring line (12), as viewed from above a substrate (1).