<p>A plasma CVD device (100) which processes substrates by plasmatizing a processing gas is provided with a processing container (103) which houses the substrates, a plurality of pairs of cathode electrodes (101) and anode electrodes (102) positioned inside the processing container (103). Each of the cathode electrodes (101) comprises a backing plate (3) and a shower plate (2). An intermediate fastening part (6) which touches the backing plate (3) is formed on the shower plate (2). As a consequence, the heat of the plasma which is applied to the shower plate (2) is transmitted to the backing plate via the intermediate fastening part, thus improving the uniformity of temperature of the cathode electrode (101). As a result, warpage and distortion of the cathode electrode (101) are prevented.</p>
