| 摘要 |
<P>PROBLEM TO BE SOLVED: To control stress distribution in a surface of a multilayer film mirror with a simple method. <P>SOLUTION: A mixing ratio of water or hydrogen gas added to a sputtering gas is changed according to a scanning position of a substrate, in a process for depositing by introducing the sputtering gas into a deposition chamber and relatively scanning against a target with rotating the substrate. For example, the stress distribution is uniformed using that internal stresses of films are changed when the mixing ratio of water or hydrogen gas is changed, since internal stress values of the films are changed by that a deposition rate on the rotating substrate is changed according to the scanning position of the substrate, during deposition of respective layers of Mo/Si multilayer films. <P>COPYRIGHT: (C)2011,JPO&INPIT |
