METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device, capable of preventing corrosion caused by cleaning. SOLUTION: The method for manufacturing the semiconductor device includes: a film-forming step of forming a film on a surface of a substrate by supplying a plurality of starting materials into a treatment chamber; and a cleaning step of cleaning the interior of the treatment chamber by supplying a fluorine-containing cleaning gas into the treatment chamber. The cleaning step includes: a first heating step of heating the interior of the treatment chamber at a first temperature for a prescribed period; a temperature-raising step of raising the temperature from the first temperature to a second temperature; and a second heating step of heating the interior of the treatment chamber at the second temperature for a prescribed period; wherein the first and second temperatures are each a prescribed temperature within the range of 500-700°C. COPYRIGHT: (C)2011,JPO&INPIT