| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device by which a gate leakage current and a current collapse are suppressed to levels meeting characteristic requirements in high commercial levels. SOLUTION: The semiconductor device includes a GaN electron transit layer 120 on a substrate, an AlGaN electron supply layer 130 on the GaN electron transit layer, a GaN thin film layer 140 on the AlGaN electron supply layer, a gate electrode 160 on the GaN thin film layer, and a source electrode 150 and a drain electrode 170 interposing the gate electrode therebetween on the GaN thin film layer, wherein a silicon nitride film 180 having a hydrogen content of≤15% is provided on the crystal surface of the GaN thin film layer between the source electrode and the gate electrode and between the gate electrode and the drain electrode. COPYRIGHT: (C)2011,JPO&INPIT
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