| 摘要 |
PROBLEM TO BE SOLVED: To prevent contamination of a silicon wafer due to heavy metal in a device post-step. SOLUTION: This manufacturing method includes; a rear surface grinding step S31 for grinding a rear surface of a silicon substrate to make thickness to≤100μm; a rear surface polishing step S32 for polishing the ground rear surface of the silicon substrate; and a heavy metal removing step S33 for immersing at least the rear surface of the silicon substrate into an acid aqueous solution. According to this method, the heavy metal introduced in the rear surface grinding step or the like is extracted by the acid aqueous solution, thereby removing the heavy metal from the silicon wafer. Thus, contamination of the silicon wafer due to the heavy metal in the device post-step is prevented. COPYRIGHT: (C)2011,JPO&INPIT
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