| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a nonvolatile memory that can restrain the rear face of a wafer from being contaminated with a metallic element or the like produced in etching treatment. SOLUTION: The method for manufacturing the nonvolatile memory includes a layer forming process for forming a rectifying layer 21 and a resistance changing layer 23 on the upper face of a silicon wafer 1, and an etching process for carrying out etching of the rectifying layer 21 and resistance changing layer 23 using a dry etching method to form a memory cell array by two-dimensionally arranging memory cells of columnar structure including the rectifying layer 21 and resistance changing layer 23 in the respective intersecting positions of a plurality of first wiring lines 11 extending in a first direction and a plurality of second wiring lines 31 extending in a second direction that intersects the first direction. In the layer forming process, a silicon film 101 is further formed to cover the lower face and side face of the silicon wafer 1. The method also includes a silicon film removing process for removing the silicon film 101 formed on the lower face and side face of the silicon wafer 1, after the etching process. COPYRIGHT: (C)2011,JPO&INPIT
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