| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging element that can prevent a change in black level due to internal light emission at a low cost without increasing the thickness of the element, and to provide an imaging device. SOLUTION: A circuit section 110 provided with transistors and a pixel section 100 are provided on the front side of a semiconductor substrate constituting the solid-state imaging element 1. The pixel section 100 is comprised of a number of sensors 101 that are arranged in two-dimensional way for detecting an incident light. When viewed from the top, a non-reflection structure region 130 is provided in only a part of the rear side thereof including a region between the circuit section 110 and the pixel section 100. The non-reflection structure region 130 is provided with micro irregularity, so as to prevent the reflection of internal light emission. COPYRIGHT: (C)2011,JPO&INPIT
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