发明名称 METHOD OF MANUFACTURING METAL OXIDE THIN-FILM PATTERN, METAL OXIDE THIN-FILM, SEMICONDUCTOR, AND THIN-FILM TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a method of easily manufacturing a metal oxide thin-film pattern with high performance and high stability at inexpensively, and to provide a method of manufacturing a thin-film transistor using the same. SOLUTION: The method of manufacturing the metal oxide thin-film pattern in a predetermined region on a substrate includes a process of applying an ink composition containing ions of metal to become metal oxide in an ink jet manner, wherein the ink composition has a viscosity of 3 to 40 mPa s and a surface tension of 10 to 70 mN/m. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010283002(A) 申请公布日期 2010.12.16
申请号 JP20090132880 申请日期 2009.06.02
申请人 KONICA MINOLTA HOLDINGS INC 发明人 HONDA MAKOTO;MIYOSHI MASANORI;HIRAI KATSURA
分类号 H01L29/786;C01G15/00;H01L21/336 主分类号 H01L29/786
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