发明名称 Processes and structures for IC fabrication
摘要 The present invention discloses methods and apparatuses for the separations of IC fabrication and assembling of separated IC components to form complete IC structures. In an embodiment, the present fabrication separation of an IC structure into multiple discrete components can take advantages of dedicated IC fabrication facilities and achieve more cost effective products. In another embodiment, the present chip assembling provides high density interconnect wires between bond pads, enabling cost-effective assembling of small chip components. In an aspect, the present process provides multiple interconnect wires in the form of a ribbon between the bond pads, and then subsequently separates the ribbon into multiple individual interconnect wires.
申请公布号 US2010314719(A1) 申请公布日期 2010.12.16
申请号 US20090484230 申请日期 2009.06.14
申请人 TEREPAC 发明人 SHEATS JAYNA
分类号 H01L23/52;H01L21/98 主分类号 H01L23/52
代理机构 代理人
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