| 发明名称 |
SEMICONDUCTOR DEVICE INCLUDING AN IMPROVED LITHOGRAPHIC MARGIN |
| 摘要 |
A semiconductor device includes first to third lines. The second line has a width equal to the first line. The second line is arranged with a space equal to the width from the first line, and partially has a gap. The third line is connected to one end of the first line and to a side of one end of the second line.
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| 申请公布号 |
US2010314771(A1) |
申请公布日期 |
2010.12.16 |
| 申请号 |
US20100724051 |
申请日期 |
2010.03.15 |
| 申请人 |
HOSOMURA YOSHIKAZU;HISADA TOSHIKI;NAKAJIMA FUMIHARU;KODAMA CHIKAAKI |
发明人 |
HOSOMURA YOSHIKAZU;HISADA TOSHIKI;NAKAJIMA FUMIHARU;KODAMA CHIKAAKI |
| 分类号 |
H01L23/535 |
主分类号 |
H01L23/535 |
| 代理机构 |
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代理人 |
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| 主权项 |
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