发明名称 PRESSURE SENSOR AND MANUFACTURING METHOD THEREOF
摘要 A pressure sensor is provided with a sensor chip having a first semiconductor layer and a second semiconductor layer wherein a pressure-sensitive region is a diaphragm. In the pressure-sensitive region, an open section is formed on the first semiconductor layer, and a recessed section is formed on the second semiconductor layer in the pressure-sensitive region. The recessed section on the second semiconductor layer is larger than the opening section on the first semiconductor layer. An insulating layer may be arranged between the first semiconductor layer and the second semiconductor layer.
申请公布号 US2010314701(A1) 申请公布日期 2010.12.16
申请号 US20080740467 申请日期 2008.10.29
申请人 YAMATAKE CORPORATION 发明人 TOKUDA TOMOHISA;TOJO HIROFUMI
分类号 H01L29/84;H01L21/302;H01L21/50 主分类号 H01L29/84
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