发明名称 SHOWER HEAD OF CHEMICAL VAPOR DEPOSITION APPARATUS
摘要 PURPOSE: A shower head of a chemical vapor deposition apparatus is provided to improve productivity by blocking a particle in etch cleaning in advance and reducing process failure. CONSTITUTION: A processing chamber(110) has a closed space therein. A source gas supply unit(120) supplies a source gas into a source chamber. An exhaust unit(140) discharges the gas inside a process chamber through a discharge line(130). A susceptor(150) supports the wafer of the process chamber. A shower head body(160) includes a spray holes for the source gas on top of the wafer.
申请公布号 KR20100131566(A) 申请公布日期 2010.12.16
申请号 KR20090050218 申请日期 2009.06.08
申请人 SEMICONDUCTOR MATERIAL INCORPORATED CO., LTD. 发明人 JEON, WON GU
分类号 H01L21/205 主分类号 H01L21/205
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