发明名称 |
SHOWER HEAD OF CHEMICAL VAPOR DEPOSITION APPARATUS |
摘要 |
PURPOSE: A shower head of a chemical vapor deposition apparatus is provided to improve productivity by blocking a particle in etch cleaning in advance and reducing process failure. CONSTITUTION: A processing chamber(110) has a closed space therein. A source gas supply unit(120) supplies a source gas into a source chamber. An exhaust unit(140) discharges the gas inside a process chamber through a discharge line(130). A susceptor(150) supports the wafer of the process chamber. A shower head body(160) includes a spray holes for the source gas on top of the wafer.
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申请公布号 |
KR20100131566(A) |
申请公布日期 |
2010.12.16 |
申请号 |
KR20090050218 |
申请日期 |
2009.06.08 |
申请人 |
SEMICONDUCTOR MATERIAL INCORPORATED CO., LTD. |
发明人 |
JEON, WON GU |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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