| 摘要 |
PROBLEM TO BE SOLVED: To impart gettering capability to a semiconductor device which is thinned in a device post-step and has a polished rear surface. SOLUTION: The manufacturing method includes: a rear surface grinding step S31 for grinding the rear surface of a silicon substrate to make thickness to≤100μm; a rear surface polishing step S32 for polishing the rear surface of the ground silicon substrate; an ion implantation step S33 for executing ion implantation of boron or n-type dopant to the ground rear surface of the silicon substrate; and an activating step S34 for activating the boron or n-type dopant which has been implanted by heating the rear surface of the silicon substrate. According to this method, contamination due to heavy metal to be introduced in the device post-step is captured to the rear surface of the silicon substrate by a gettering effect of activated ion species. COPYRIGHT: (C)2011,JPO&INPIT
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