| 摘要 |
PROBLEM TO BE SOLVED: To carry out preliminary heating at a required gas temperature immediately after gas is introduced even if a heat capacity taken by the gas is large. SOLUTION: A heat processing device includes a processing chamber 21a for processing a wafer 1, and a preliminary heating device 29 for supplying a gas 28 preliminarily heated in a heating chamber 41 to the processing chamber 21a. In the heat processing device, a heating plate 43 for accelerating the heating of the gas 28 is disposed in the heating chamber 41 so that the thickness T of the heating plate 43 is formed thicker than the thickness t of a wall of the heating chamber 41. A plurality of venting holes 44 are formed on the heating plate 43. Since the heating plate 43 is thick, heating at the required gas temperature can be achieved immediately after the gas is introduced even if the heat capacity taken by the gas 28 is large. COPYRIGHT: (C)2011,JPO&INPIT
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