| 摘要 |
PROBLEM TO BE SOLVED: To provide an optical semiconductor device which suppresses unnecessary diffusion of an impurity to have fine characteristics. SOLUTION: The optical semiconductor device 10 includes a mesa portion 12 having a p-type clad layer 18 doped with Zn as a p-type impurity and with Ti as an impurity for forming a deep donor level, and an embedding layer 13 which is formed of InP, which is a group III-V semiconductor doped with Fe as an impurity forming a deep acceptor level, and is in contact with the p-type clad layer 18 at the sides of the mesa portion 12 to embed the mesa portion 12 in the embedding layer. COPYRIGHT: (C)2011,JPO&INPIT
|
