发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which prevents the deterioration of productivity accompanied by the test processing of a gas flow rate regulator. SOLUTION: The plasma treatment apparatus supplies treatment gas measured by a gas flow meter 210 from a treatment gas supply source 208 to a treatment chamber 103 to plasma-treat a sample, and supplies purge gas from a purge gas supply source 201 to the treatment chamber 103 to test a flow rate of the gas flow meter 210. A valve 212 communicating with a suction side of an evacuation pump 215 is arranged on a gas supply line communicating from a downstream side of a gas flow rate regulation unit 200 through a valve 213 to the treatment chamber 103 in order to serve as a branch line for bypassing the treatment chamber 103. When the gas flow rate regulator is tested, the valve 212 is opened to exhaust the purge gas flowing in the gas flow meter 210 without passing through the treatment chamber 103. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010283211(A) 申请公布日期 2010.12.16
申请号 JP20090136265 申请日期 2009.06.05
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 UEMURA TAKASHI;SATO KOHEI;TAUCHI TSUTOMU;MAKINO AKITAKA
分类号 H01L21/3065;H01L21/677 主分类号 H01L21/3065
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