发明名称 SEMICONDUCTOR DEVICE AND STATIC ELECTRICITY PROTECTION METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To improve the static electricity protection performance of a semiconductor integrated circuit. SOLUTION: A static electricity protection circuit of a semiconductor device includes: a power source system which supplies a current to the semiconductor integrated circuit provided in the semiconductor device by a power source potential line and a reference potential line; a primary protection circuit which, in the case of generation of a surge voltage at a signal terminal, releases a surge current to the power source system via a first node connected to the signal terminal; a trigger circuit which generates a trigger signal in response to the surge voltage generated in the power source system; and a secondary protection circuit. The secondary protection circuit releases the surge current to the power source system via a second node connected between the first node and the semiconductor integrated circuit in response to the trigger signal, whereby the surge voltage can be quickly suppressed near the semiconductor integrated circuit. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010283299(A) 申请公布日期 2010.12.16
申请号 JP20090137586 申请日期 2009.06.08
申请人 RENESAS ELECTRONICS CORP 发明人 MORISHITA YASUYUKI
分类号 H01L21/822;H01L21/8238;H01L27/04;H01L27/06;H01L27/092 主分类号 H01L21/822
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