| 摘要 |
The light emitting device (10) of the present invention is provided with a light emitting layer (13), and a pair of electrodes (12 and 14) for injecting electric current into the light emitting layer (13). The light emitting layer (13) includes GaN-based semiconductor particles (21). The light emitting device (10) of the present invention is provided further with a light absorber for absorbing at least part of the light with a wavelength of 470 nm to 800 nm. The light absorber is, for example, a light absorption film (19) provided on at least a part of the surface of each of the GaN-based semiconductor particles (18). Further, the light absorber may be light absorption particles dispersed in the light emitting layer, or may be a light absorption layer disposed on the light exit side with respect to the light emitting layer.
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