发明名称 METHOD OF FABRICATING ELECTRON EMISSION SOURCE AND METHOD OF FABRICATING ELECTRONIC DEVICE BY USING THE METHOD
摘要 A method of fabricating an electron emission source and a method of fabricating an electronic device by using the method. An electron emission material layer of the electron emission source is formed by filtration and transfer, and a mask including windows (openings) having predetermined patterns is used in a transfer process so that an electron emission layer having a desired shape may be freely obtained.
申请公布号 US2010316792(A1) 申请公布日期 2010.12.16
申请号 US20100685767 申请日期 2010.01.12
申请人 KOREA UNIVERSITY INDUSTRY AND ACADEMY COOPERATIONFOUNDATION 发明人 LEE CHEOL JIN;JUNG SEUNG IL;SHIN DONG HOON
分类号 B05D5/12 主分类号 B05D5/12
代理机构 代理人
主权项
地址