| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming a barrier layer of low contact resistance with excellent coating performance, in an inside of a hole having high aspect ratio. <P>SOLUTION: A liner material such as tantalum or tantalum nitride is sputtering-deposited in the inside of the hole in this method. The method uses a reactor 150 in which long throw sputtering, self-ionized plasma (SIP) sputtering, induction coupling plasma (ICP) resputtering and coil sputtering are combined in one chamber. Long throw SIP sputtering promotes hole coating. The ICP resputtering reduces a thickness of a liner film of a hole bottom part, to reduce contact resistance with the first metal layer. ICP coil sputtering deposits a protection layer, on an area adjacent to a hole opening part where film-thinning by the resputtering is unfavorable, during the ICP resputtering. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
