发明名称 MANUFACTURING METHOD OF ELECTROOPTICAL DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method of an electrooptical device wherein elements such as transistors can be formed with a good yield on a substrate to be treated. SOLUTION: The manufacturing method of a liquid crystal device 11 wherein TFT elements are formed of a first face 101a of the substrate to be treated 101 includes: a process of forming a conductive film 70 covering from the first face 101a to a second face 101b; a process of forming a resist pattern 83 on an element area 82 of the first face 101a; a process of etching and removing the conductive film 70 in the area except the element area 82 by using the resist pattern 83 as a mask; and a process of forming a gate electrode by patterning the remaining conductive film 70 after removing the resist pattern 83. In the process of etching and removing the conductive film, etching is carried out in such a manner wherein the substrate to be treated 101 is supported by bringing a plurality of support members 81 into contact with an area not overlapping the element area 82 of the first face 101a. COPYRIGHT: (C)2011,JPO&INPIT
申请公布号 JP2010281866(A) 申请公布日期 2010.12.16
申请号 JP20090132846 申请日期 2009.06.02
申请人 SEIKO EPSON CORP 发明人 MUROHASHI TETSUAKI;IWASHITA YOSHIYUKI
分类号 G09F9/00;G02F1/1368;G09F9/30 主分类号 G09F9/00
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