| 摘要 |
<p>A via opening section (26) is formed by etching a second interlayer insulating film (19A) portion exposed from the region where an opening section (21), which is in a hard mask film (18) and corresponds to a second-layer wiring pattern, and an opening section (23), which is in a third resist pattern (22) and corresponds to a first-layer wiring pattern, overlap each other.</p> |
