| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming material for a silicon oxide film capable of obtaining good step coverage in forming the silicon oxide film on a substrate by the CVD method, and a method of forming the silicon oxide film using the same. SOLUTION: In forming the silicon oxide film on the substrate by the CVD method, the film forming material for the silicon oxide film is used, which comprises a siloxane-based compound having a carbonyl group. The compound decomposes and CO desorbs by energy applied. A product generated by the desorption of CO and contributing to the film formation has no chemically structured dangling bond in the film forming material. COPYRIGHT: (C)2011,JPO&INPIT |
