发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT, METHOD OF SAVING AND RECOVERING INTERNAL STATE OF THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit which further reduces leak currents while holding an internal state, and to provide an internal state saving recovery method of the semiconductor integrated circuit. <P>SOLUTION: A semiconductor integrated circuit includes a first circuit (120) including a third circuit (122) and a fourth circuit (124), and a second circuit (110) to control the power-on/off of a first power supply (MPW) which supplies power to the first circuit (120). The third circuit (122) stores an internal state in a flip-flop group (140) where holding information is erased by the power-off of the first power supply (MPW). The fourth circuit (124) store the internal state in a retention flip-flop group (150) which stores information before the power-off of the first power supply (MPW) and recovers it when the first power supply (MPW) is powered on again. <P>COPYRIGHT: (C)2011,JPO&INPIT</p>
申请公布号 JP2010282411(A) 申请公布日期 2010.12.16
申请号 JP20090135085 申请日期 2009.06.04
申请人 RENESAS ELECTRONICS CORP 发明人 KAWASAKI TATSUYA;KUNIE SHUICHI;SASAKI TSUNEKI
分类号 G06F1/30;G06F1/32 主分类号 G06F1/30
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