| 摘要 |
PROBLEM TO BE SOLVED: To provide a two-wavelength laser device with high reliability which suppresses power consumption during high-output and high-temperature operation. SOLUTION: The semiconductor laser device includes a first semiconductor laser element 102, and a second semiconductor laser element 103 having a different oscillation wavelength from the first semiconductor laser element 102, and both are formed on a substrate 101. Resonator lengths of the first semiconductor laser element 102 and the second semiconductor layer element 103 are 1500μm or longer. Each of the first semiconductor laser element 102 and second semiconductor laser element 103 includes an n-type clad layer formed of In<SB>y</SB>(Ga<SB>1-x1</SB>Al<SB>x1</SB>)<SB>1-y</SB>P (0<x1<1, 0<y<1), and a p-type clad layer formed of In<SB>y</SB>(Ga<SB>1-x2</SB>Al<SB>x2</SB>)<SB>1-y</SB>P (0<x2<1, 0<y<1). An active layer 303 is formed of Al<SB>z</SB>Ga<SB>1-z</SB>As (0≤z<1), and includes a well layer of only one layer. COPYRIGHT: (C)2011,JPO&INPIT
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