发明名称 METHOD FOR FORMING TRANSPARENT CONDUCTIVE OXIDE
摘要 Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a "cold" sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
申请公布号 WO2010144357(A2) 申请公布日期 2010.12.16
申请号 WO2010US37612 申请日期 2010.06.07
申请人 APPLIED MATERIALS, INC.;KOMIN, VALERY V.;LE, HIEN-MINH HUU;TANNER, DAVID;PAPANU, JAMES S.;GREENE, PHILIP A.;SHRAUT, SURESH M.;GOUK, ROMAN;VERHAVERBEKE, STEVEN 发明人 KOMIN, VALERY V.;LE, HIEN-MINH HUU;TANNER, DAVID;PAPANU, JAMES S.;GREENE, PHILIP A.;SHRAUT, SURESH M.;GOUK, ROMAN;VERHAVERBEKE, STEVEN
分类号 H01L31/042;H01L31/18 主分类号 H01L31/042
代理机构 代理人
主权项
地址
您可能感兴趣的专利