| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a tandem solar cell including a solar cell layer having an InGaP/GaAs/Si 3-junction structure, capable of being efficiently produced at low cost. <P>SOLUTION: In the tandem solar cell including an InGaP/(In)GaAs/Si 3-junction structure solar cell, an (In)GaAs solar cell layer and an Si solar cell layer are bonded together across a Ge interposing layer formed at part of the (In)GaAs solar cell layer. A Ge solar cell layer may be formed on the other surface of the Si solar cell layer to include a solar cell layer having an InGaP/(In)GaAs/Si/Ge 4-junction structure. <P>COPYRIGHT: (C)2011,JPO&INPIT |
