| 摘要 |
PROBLEM TO BE SOLVED: To form a fine via pattern while reducing the man-hours for pattern design, the number of sheets of use masks and the deviation of superposition. SOLUTION: A part of an interlayer insulating film 19A, which is exposed to an area wherein an opening 21 corresponding to a wiring pattern in the second layer of a hard mask film 18 and an opening 23 corresponding to a wiring pattern in the first layer of a third resist pattern 22 overlap, is etched to form via openings 26 and 27. COPYRIGHT: (C)2011,JPO&INPIT |
