ALUMINUM NITRIDE SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To obtain a high quality aluminum nitride substrate excellent in heat dissipation properties of≥190 W/m K thermal conductivity, which prevents defective appearance and solderability from degrading. SOLUTION: This single layer aluminum nitride substrate with≤1.5 mm thickness is provided on the surface with a metallized layer comprising W or Mo as a main component and formed by a cofiring method, where the aluminum nitride substrate except the metallized layer has thermal conductivity of≥190 W/m K; the thickness of the metallized layer is 1-20μm; and when observing the surface of the metallized layer by magnifying 20 times, any liquid phase component is not observed. COPYRIGHT: (C)2011,JPO&INPIT