发明名称 SUBSTRATE TREATING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 A substrate treating method comprising a step of preparing a semiconductor substrate (W, 11) which has an oxide film (13, 14) containing at least one of a rare earth oxide and an alkaline earth oxide, at least a portion of the oxide film (13, 14) being exposed, and a rinse step of supplying the oxide film (13, 14) on the semiconductor substrate (W, 11) with a rinse liquid made of an alkaline chemical or an organic solvent. Preferably, the alkaline chemical is an alkaline aqueous solution having a pH of more than 7. Further, preferably, the organic solvent is a high concentration organic solvent having a concentration of substantially 100%.
申请公布号 US2010317185(A1) 申请公布日期 2010.12.16
申请号 US20100813823 申请日期 2010.06.11
申请人 VOS RITA;MERTENS PAUL;SCHRAM TOM;WADA MASAYUKI 发明人 VOS RITA;MERTENS PAUL;SCHRAM TOM;WADA MASAYUKI
分类号 H01L21/28 主分类号 H01L21/28
代理机构 代理人
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