| 摘要 |
The invention is a vertical geometry light emitting diode capable of emitting light in the electromagnetic spectrum having a substrate, a lift-off layer, a strain relieved superlattice layer, a first doped layer, a multilayer quantum wells comprising alternating layers quantum wells and barrier layers, a second doped layer, a third doped layer and a metallic contact that is in a vertical geometry orientation. The different layers consist of a compound with the formula AlxlnyGa(1-x-y)N, wherein x is more than 0 and less than or equal to 1, y is from 0 to 1 and x+y is greater than 0 and less than or equal to 1. The barrier layer on each surface of the quantum well has a band gap larger than a quantum well bandgap. The first and second doped layers have different conductivities. The contact layer has a different conductivity than the third doped layer
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