APPARATUS AND METHOD FOR MANUFACTURING MULTI-COMPONENT OXIDE HETEROSTRUCTURES
摘要
Certain embodiments disclosed herein relate to the formation of multi-component oxide heterostructures (MCOH) using surface nucleation to pattern the atomic layer deposition (ALD) of perovskite material followed by patterned etch and metallization to produce ultra-high density MCOH nano-electronic devices. Applications include ultra-high density MCOH memory and logic, as well as electronic functionality based on single electrons, for example a novel flash memory cell Floating-Gate (FG) transistor with LaAlO3 as a gate tunneling dielectric. Other types of memoiy devices (DIMMS. DRAM, and DDR) made with patterned ALD Of LaAlO3 as a gate dielectric are also possible.
申请公布号
WO2010144730(A2)
申请公布日期
2010.12.16
申请号
WO2010US38211
申请日期
2010.06.10
申请人
NEXGEN SEMI HOLDING, INC.
发明人
BENNAHMIAS , MARK , JOSEPH;ZANI , MICHAEL , JOHN;SCOTT, JEFFERY, WINFIELD