发明名称 |
PROCESS FOR PRODUCING A SEMICONDUCTOR-ON-SAPPHIRE ARTICLE |
摘要 |
<p>A process for producing a semiconductor-on-sapphire article, including: forming a barrier layer and a semiconductor layer on a sapphire substrate, the barrier layer being disposed between the sapphire substrate and the semiconductor layer to inhibit at least one of aluminium from the sapphire and extended defects arising from the sapphire- semiconductor interface from entering the semiconductor layer; wherein the semiconductor is at least one of silicon and a silicon-germanium alloy.</p> |
申请公布号 |
WO2010141994(A1) |
申请公布日期 |
2010.12.16 |
申请号 |
WO2010AU00721 |
申请日期 |
2010.06.11 |
申请人 |
THE SILANNA GROUP PTY LTD;ATANACKOVIC, PETAR, BRANKO |
发明人 |
ATANACKOVIC, PETAR, BRANKO |
分类号 |
H01L33/00;H01L21/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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