发明名称 PROCESS FOR PRODUCING A SEMICONDUCTOR-ON-SAPPHIRE ARTICLE
摘要 <p>A process for producing a semiconductor-on-sapphire article, including: forming a barrier layer and a semiconductor layer on a sapphire substrate, the barrier layer being disposed between the sapphire substrate and the semiconductor layer to inhibit at least one of aluminium from the sapphire and extended defects arising from the sapphire- semiconductor interface from entering the semiconductor layer; wherein the semiconductor is at least one of silicon and a silicon-germanium alloy.</p>
申请公布号 WO2010141994(A1) 申请公布日期 2010.12.16
申请号 WO2010AU00721 申请日期 2010.06.11
申请人 THE SILANNA GROUP PTY LTD;ATANACKOVIC, PETAR, BRANKO 发明人 ATANACKOVIC, PETAR, BRANKO
分类号 H01L33/00;H01L21/00 主分类号 H01L33/00
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