| 摘要 |
PROBLEM TO BE SOLVED: To decrease the pollution risk of group II-VI semiconductor materials, and to attain accuracy, reproducibility and reliability of doping. SOLUTION: A chamber 7 for annealing the group II-VI semiconductor materials has a first region 8 for storing the Group 2B elements of the Periodic Table, and a second region 9 designed to receive the group II-VI semiconductor materials. The chamber 7 is equipped with a partition 12 at the height of an intermediate region 13, and apassage opening 14. The passage opening 14 is formed at the partition 12 and has a gas back-stream blocking device 15 for ensuring a one-way flow for the gaseous Group 2B elements of the Periodic Table, from the first region 8 to the second region 9. The chamber 7 is heated by heating means 6a, 6b which is capable of separately heating two regions 8, 9. COPYRIGHT: (C)2011,JPO&INPIT |
