| 摘要 |
A method for forming a bipolar junction transistor comprises forming a first well of a second conductive type for forming a collector region in a substrate including device isolation layers, wherein the substrate comprises a first conductive type, forming a second well of the first conductive type for a metal-oxide-semiconductor transistor of the second conductive type within the first well of the second conductive type, wherein the second well of the first conductive type is formed deeper than the device isolation layers, forming a shallow third well of the first conductive type for a base region within the first well of the second conductive type, wherein the shallow third well of the first conductive type is formed shallower than the device isolation layers, and simultaneously forming an emitter region within the shallow third well of the first conductive type and a plurality of collector contacts within the first well of the second conductive type by performing an ion implantation process for forming source/drain regions of the metal-oxide-semiconductor transistor of the second conductive type.
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